sangdest microelectronics technical data green products data sheet n0029, rev. a ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBR860S MBR860S schottky rectifier applications: ? switching power supply ? converters ? free-wheeling diodes ? reverse battery protection ? center tap configuration features: ? designed as bypass diodes for solar panels ? high forward surge capability ? ultra low forward voltage drop ? excellent high temperature stability ? this is a pb ? free device ? all smc parts are traceable to the wafer lot ? additional testing can be offered upon request mechanical dimensions: in mm to-277b
sangdest microelectronics technical data green products data sheet n0029, rev. a ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBR860S marking diagram: where xxxxx is yywwl 8 = forward current (8a) 60 = reverse voltage (60v) s = device type yy = year ww = week l = lot number cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping MBR860S to-277b (pb-free) 5000pcs/ reel for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel p ackaging specification. maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 60 v average forward current i f(av) 50% duty cycle @t c =80c, rectangular wave form 8 a peak one cycle non- repetitive surge current i fsm 8.3 ms, half sine pulse 150 a
sangdest microelectronics technical data green products data sheet n0029, rev. a ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBR860S electrical characteristics: characteristics symbol condition max. units forward voltage drop v f1 @ 8a, pulse, t j = 25 c 0.65 v v f2 @ 8a, pulse, t j = 125 c 0.60 v reverse current i r1 @v r = rated v r t j = 25 c 1.0 ma i r2 @v r = rated v r t j = 125 c 20 ma typical junction capacitance cj @v r = 5.0 v, tc=25 f sig = 1mhz 400 pf * pulse width < 300s, duty cycle <2% thermal-mechanical specifications: characteristics symbol condition specification units junction temperature t j - -55 to +150 c storage temperature t stg - -55 to +150 c maximum thermal resistance junction to soldering point r js dc operation 1.5 c/w maximum thermal resistance junction to case r jc dc operation 2.3 c/w approximate weight wt - 0.08 g case style to-277b
sangdest microelectronics technical data green products data sheet n0029, rev. a ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBR860S 10 100 1000 10000 0 5 10 15 20 25 30 35 40 reverse voltage (v) junction capacitance (pf) 0.0001 0.001 0.01 0.1 1 10 10 20 30 40 50 60 percent of rated peak reverse voltage (%) instantaneous reverse current-ir(ma) 1 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 forward voltage drop (v) instantaneous forward current (a) tj=25 tj=25 tj=25 tj=125 tj=125 fig.1-typical junction capacitance fig.2-typical reverse characteristics fig.3-typical instantaneous forward voltage characteristics
sangdest microelectronics technical data green products data sheet n0029, rev. a ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBR860S disclaimer: 1- the information given herein, including the specifications and dimensions, is subject to change without prior notice to impr ove product characteristics. before ordering, purchasers are advised to c ontact the smc - sangdest microelectronics (nanjing) co., ltd sale s department for the latest version of the datasheet(s). 2- in cases where extremely high reliability is required (suc h as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensur ed by using semiconductor devices that feature assured safety or by means of users? fail-safe precautions or other arrangement . 3- in no event shall smc - sangdest microelectronics (nanjing) c o., ltd be liable for any damages that may result from an accid ent or any other cause during operation of the user?s units according to the datasheet(s). smc - sangdest microelectronics (nanjing) c o., ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of infor mation, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronics (nanjing) c o., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or smc - sangdest microelectr onics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permissio n of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws a nd regulations..
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